FLOAT ZONE WAFER

WaferPro understands the need for top level pure wafers and thus offers superior Float Zone (FZ) Silicon wafers for the growing needs of our customers.

 

Float Zone (FZ) Silicon is extremely pure silicon with a very low concentration of oxygen and carbon impurities. This makes it ideal for applications such as solar chips, RF circuits and accurate power devices.

Also well suited for applications where clock cycles in the order of tera are required, FZ Silicon Wafers are ideal for use in power devices and sensors.

Types of Float Zone Wafer

HIRES FZ - High Resistivity Float Zone Wafer

High Resistivity FZ wafers are the most common type of FZ wafers. They are made from high purity FZ ingots which have a resistivity of greater than 1,000 ohm-cm. These wafers are well suited for RF MEMS switches, transmitter and receiver chips and microwave and millimeter wave circuits and devices.

NTD FZ - Neutron Doped Float Zone Wafer

NTD FZ wafers are made from undoped high purity FZ ingots which have been doped using a Neutron Transmutaion Doping irradiation process. This creates N Type material with a lower, but tighter resistivity range. These wafers are used to make components for semiconductor power devices

GD FZ - Gas doped Float Zone Wafer

Gas Doped FZ wafers are made from FZ ingot that was intentionally doped with gaseous dopants introduced at the melt interface. This process offers good uniformity along the length of the ingot.

FZ WAFER

Our Capability

FZ wafers are offered with great customizability and the parameters are greatly flexible as per your needs.

FZ wafer capability

Our Best Sellers

Product SKUProduct Specification
F020402" INTRINSIC/UNDOPED (1-0-0) ≥10,000 ohm-cm, 279±10 µm PRIME FZ WAFER, SSP, PRIMARY FLAT ONLY
BOW/WARP≤20µm, TTV≤5µm, LIFETIME≥1,000µs, PARTICLE≤10@≥0.3µm
F022402" INTRINSIC/UNDOPED (1-0-0) ≥10,000 ohm-cm, 279±10 µm PRIME FZ WAFER, DSP, PRIMARY FLAT ONLY
BOW/WARP≤20µm, TTV≤5µm, LIFETIME≥1,000µs, PARTICLE≤10@≥0.3µm
F020432" N/Ph (1-0-0) ≥10,000 OHM-CM, 279±10µm PRIME FZ WAFER, SSP, PRIMARY SEMI STD FLAT ONLY,
BOW/WARP≤20µm, TTV≤5µm, LIFETIME≥1,000µs, PARTICLE≤10@≥0.3µm
F030403" INTRINSIC/UNDOPED (1-0-0) ≥10,000 ohm-cm, 381±10 µm PRIME FZ WAFER, SSP, PRIMARY FLAT ONLY
BOW/WARP≤20µm, TTV≤5µm, LIFETIME≥1,000µs, PARTICLE≤10@≥0.3µm
F030433" N/Ph (1-0-0) ≥10,000 OHM-CM, 381±10µm PRIME FZ WAFER, SSP, PRIMARY SEMI STD FLAT ONLY,
BOW/WARP≤20µm, TTV≤5µm, LIFETIME≥1,000µs, PARTICLE≤10@≥0.3µm
F032433" N/Ph (1-0-0) ≥10,000 OHM-CM, 381±10µm PRIME FZ WAFER, DSP, PRIMARY SEMI STD FLAT ONLY,
BOW/WARP≤20µm, TTV≤5µm, LIFETIME≥1,000µs, PARTICLE≤10@≥0.3µm
F04041100mm INTRINSIC/UNDOPED (1-0-0) ≥10,000 ohm-cm, 525±10µm PRIME FZ WAFER, SSP, 2 SEMI FLATS
BOW/WARP≤20µm, TTV≤5µm, LIFETIME≥1,000µs, PARTICLE≤10@≥0.3µm
F04043100mm N/Ph (1-0-0) ≥10,000 ohm-cm, 525±10µm PRIME FZ WAFER, SSP, 2 SEMI FLATS
BOW/WARP≤20µm, TTV≤5µm, LIFETIME≥1,000µs, PARTICLE≤10@≥0.3µm
F04045100mm P/B (1-0-0) ≥10,000 ohm-cm, 525±10µm PRIME FZ WAFER, SSP, 2 SEMI FLATS
BOW/WARP≤20µm, TTV≤5µm, LIFETIME≥1,000µs, PARTICLE≤10@≥0.3µm
F04241100mm INTRINSIC/UNDOPED (1-0-0) ≥10,000 ohm-cm, 525±10µm PRIME FZ WAFER, DSP, 2 SEMI FLATS
BOW/WARP≤20µm, TTV≤5µm, LIFETIME≥1,000µs, PARTICLE≤10@≥0.3µm
F04244100mm N/Ph (1-0-0) ≥10,000 ohm-cm, 525±10µm PRIME FZ WAFER, DSP, 2 SEMI FLATS
BOW/WARP≤20µm, TTV≤5µm, LIFETIME≥1,000µs, PARTICLE≤10@≥0.3µm
F04245100mm P/B (1-0-0) ≥10,000 ohm-cm, 525±10µm PRIME FZ WAFER, DSP, 2 SEMI FLATS
BOW/WARP≤20µm, TTV≤5µm, LIFETIME≥1,000µs, PARTICLE≤10@≥0.3µm
F06041150mm INTRINSIC/UNDOPED (1-0-0) ≥10,000 ohm-cm, 675±10µm PRIME FZ WAFER, SSP, 2 SEMI FLATS
BOW/WARP≤20µm, TTV≤5µm, LIFETIME≥1,000µs, PARTICLE≤10@≥0.3µm
F06241150mm INTRINSIC/UNDOPED (1-0-0) ≥10,000 ohm-cm, 675±10µm PRIME FZ WAFER, DSP, 2 SEMI FLATS
BOW/WARP≤20µm, TTV≤5µm, LIFETIME≥1,000µs, PARTICLE≤10@≥0.3µm
F08040200mm INTRINSIC/UNDOPED (1-0-0) ≥10,000 ohm-cm, 725±25µm PRIME FZ WAFER, SSP, SEMI NOTCH
BOW/WARP≤30µm, TTV≤10µm, LIFETIME≥1,000µs, PARTICLE≤10@≥0.3µm

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