100mm SOI WAFERS – Device P/B (1-0-0) 1-30 ohm-cm 2±1µm, Box 2µm±5%, Handle P/B (1-0-0) 1-30 ohm-cm 500±15µm

, , , , , , ,

SKU: S04560 Categories: , , , , , , , ID: 4687

ITEM# S04560

4″ SOI WAFERS

DEVICE TOP LAYER:
Diameter: 100±0.5mm
Type/Dopant: P/B
Orientation: (1-0-0)±0.5°
Thickness: 2±1µm
Resistivity: 1-30 ohm-cm
Finish: Front Polished

BURIED THERMAL OXIDE:
Thickness: 2µm±5%

HANDLE LAYER:
Diameter: 100±0.5mm
Type/Dopant: P/B
Orientation: (1-0-0)±0.5°
Resistivity: 1-30 ohm-cm
Thickness: 500±15um
Flats: 1 Semi std
Finish: Back Polished + Oxide

Overall Wafer:
Edge exclusion: ≤5mm
TTV: ≤5μm, Warp: ≤50μm, Bow: ≤50μm