ITEM# S06560
150mm SOI WAFERS
DEVICE TOP LAYER:
Diameter: 150±0.5mm
Type/Dopant: INTRINSIC/UNDOPED
Orientation: (1-0-0)±1°
Thickness: 58.6±0.5µm
Resistivity: ≥10,000 ohm-cm
Edge exclusion: ≤5mm
BURIED THERMAL OXIDE:
Thickness: 1±0.1µm
HANDLE LAYER:
Diameter: 150±0.5mm
Type/Dopant: INTRINSIC/UNDOPED
Orientation: (1-0-0)±1°
Resistivity: ≥10,000 ohm-cm
Thickness: 600±10um
Flat: Primary Semi std.
Back Finish: Polished with oxide
Back Laser Mark: None
Oxygen concentration: ≤13ppma
