ITEM# S08523
200mm SOI WAFERS
DEVICE TOP LAYER:
Type/Dopant: N/Ph
Orientation: (1-0-0)±0.5°
Resistivity: 0.3 – 1.2 ohm-cm
Thickness: 80±1µm
Finish: Frontside Polished
Notch: ** Notch Orientation: (1-0-0)±0.5°
Notch Depth: 1.00mm +0.25mm -0.00mm
BURIED THERMAL OXIDE:
9,000Å will be grown on Handle
1,000Å will be grown on Device
Thickness: 1±0.1µm
HANDLE LAYER:
Diameter: 200±0.5mm
Type/Dopant: N/Ph
Orientation: (1-0-0)±0.5°
Resistivity: 1 – 30 ohm-cm
Thickness: 550±10um
Notch: ** Notch Orientation: (1-0-0)±0.5°
Notch Depth: 1.00mm +0.25mm -0.00mm
Finish: Backside Polished with 0.9±0.1µm thermal oxide
Oxygen concentration: <13ppma
Laser Mark: SEMI M12 on the backside
Scribe Character Set = *****
Where * = counter
Overall Wafer:
Edge exclusion: ≤5mm
Edge Profile: Semi M1
TTV: ≤2μm, Warp: ≤60μm, Bow: ≤60μm
