200mm SOI WAFERS – Device P/B (1-0-0) 8.5-11.5 ohm-cm 220±10nm, Box 3µm±5%, Handle P/B (1-0-0) ≥750 ohm-cm 725±15µm

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SKU: S08502 Categories: , , , , , , , ID: 4691

ITEM# S08502

200mm SOI WAFERS

DEVICE TOP LAYER:
Diameter: 200±0.2mm
Type/Dopant: P/B
Orientation: (1-0-0)±0.5°
Thickness: 220±10nm
Resistivity: 8.5-11.5 ohm-cm
Finish: Frontside Polished

BURIED THERMAL OXIDE:
Thickness: 3μm±5%

HANDLE LAYER:
Diameter: 200±0.2mm
Type/Dopant: P/B
Orientation: (1-0-0)±0.5°
Thickness: 725±15um
Resistivity: ≥750 ohm-cm
Notch: Semi Standard
Back Finish: Etched + Oxide

Overall Wafer:
Edge exclusion: ≤5mm
TTV: ≤5μm, Warp: ≤50μm, Bow: ≤50μm