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WaferPro is proud to add premium quality Silicon on Insulator (SOI) wafer in its comprehensive armory of silicon wafer based products. The SOI wafers that we provide are top of the line and can easily meet all your needs ranging from sensors to power converters.


Chips made out of SOI wafers have the advantage of offering 30% greater speeds and 80% lower power consumption compared to their CMOS counterparts. An SOI wafer is made up of 3 basic layers, a device layer, a BOX layer and a Handle layer. The BOX layer also called the Buried Oxide layer is trapped between the Device layer and the Handle layer. Transistors form within the top, device layer which are the center of SOI wafer’s speed and efficiency. These transistors are not only great when it comes to conserving power but are shielded from external factors like cosmic rays and radioactive interferences, leading to reduced data loss.

Types of SOI Wafer

Customizability is a major cornerstone of WaferPro and we always try our best to meet all your needs. In that very essence WaferPro offers SOI wafers of the following types:


  • Thick SOI Wafers
  • Ultra-Thin SOI Wafers
  • Ultra-Uniform SOI Wafers
  • Ultra-Flat SOI Wafers

For wafer sizes, we offer 2″, 3″, 4″, 5″, 6″, 8” diameters of our SOI wafers.

We offer SOI Wafers with resistivity ranging in between 0.001 – 30,000+ ohm-cm.

The top layer, i.e. device layer is of paramount importance during device construction therefore, we offer variable thickness ranging from 100nm to 200um to suit your needs, with uniformity as follows:

  • +/- 0.01 micrometer
  • +/- 0.15 micrometer
  • +/- 0.5 micrometer

For the Buried Oxide or BOX layer, WaferPro offers up to 15 micro oxides with several options for CVD and thermal oxide. The thickness of our Handle layer is as little as 100 micrometers.