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SILICON ON INSULATOR (SOI) WAFER

WaferPro now provides premium quality silicon-on-insulator (SOI) wafers, expanding our comprehensive silicon wafer offerings. Our top-tier SOI wafers are optimized for diverse applications from sensors to power components.

Chips fabricated on SOI wafers achieve 30% faster speeds and 80% lower power demands compared to CMOS devices. The SOI structure consists of three layers: a top active device layer for transistor fabrication, a buried oxide (BOX) insulator layer, and a bottom handle wafer layer.

The BOX insulates the delicate devices, shielding them from environmental interference while enhancing performance. Transistors built into the top device layer drive the speed and efficiency gains of SOI technology. They allow for sophisticated power-saving configurations and reduced data loss from cosmic rays or radiation.

With the addition of SOI wafers, WaferPro now delivers this advanced substrate option to R&D teams and manufacturers pursuing next-generation innovations. Our SOI wafers merge cutting-edge design potential with our proven wafer manufacturing quality.

Types Of SOI Wafer

Customizability is a major cornerstone of WaferPro and we always try our best to meet all your needs. In that very essence WaferPro offers SOI wafers of the following types:

Thick SOI Wafer

This type of wafer has device thickness from 1µm to 300µm.

Ultra-Thin SOI Wafer

This type of wafer has device thickness <500nm.

Ultra-Uniform SOI Wafer

Uniformity of device thickness can be as low as ±0.5µm for thick SOI and ±10nm for ultra-thin SOI.

Ultra-Flat SOI Wafer

This type of SOI has very low BOW/WARP/TTV for specific applications.

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MAJOR APPLICATIONS OF SOI WAFER

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Low-Power ICs

SOI technology enables fabrication of low leakage, low power integrated circuits for mobile devices

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High Speed Electronics

Ultra-fast switching RF SOI devices used in 5G, WiFi 6, and radar communication systems

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Low Noise Amplifiers

SOI wafers are ideal for manufacturing ultra low-noise IF, RF semiconductor amplifiers

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Automotive Electronics

Rugged SOI chips meet automotive reliability and temperature requirements

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Photonics

SOI wafers are useful for integrating electronics and photonics for optical transceivers and sensors

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MEMS

SOI wafers are suitable substrates for specialized MEMS accelerometers, gyroscopes etc.

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Aerospace ICs

Exceptional radiation hardness, wide temperature tolerance for space electronics

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Biomedical

Disposable biosensors and DNA microarrays manufactured using SOI micromachining

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Smart Power

Merging high voltage power devices with control logic on SOI wafer

Our Capability

SOI wafers are offered with great customizability and the parameters are greatly flexible as per your needs.

SOIDiameters2"(50.8mm)3"(76.2mm)4"(100mm)5"(125mm)6"(150mm)8"(200mm)
Device layerTypeP , N , Intrinsic
DopantB , Ph , Undoped
Orientation( 1-0-0 ) , ( 1-1-1 )
Resistivity
(ohm-cm)
0.001 -
10,000+
Thickness
(μm)
0.05 - 300
Uniformity± 10nm ,
± 0.5μm , ± 1μm
BOX layerBOX
Thickness
1,000A - 3μm
BOX
Uniformity
≤ ± 5 %
Handle layerTypeP , N , Intrinsic
DopantB , Ph , Undoped
Orientation( 1-0-0 ) , ( 1-1-1 )
Resistivity
(ohm-cm)
0.001 -
10,000+
Thickness
(μm)
200 - 750
Uniformity
(μm)
≤ ± 15
FinishSSP , DSP

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