SILICON ON INSULATOR (SOI) WAFER
WaferPro now provides premium quality silicon-on-insulator (SOI) wafers, expanding our comprehensive silicon wafer offerings. Our top-tier SOI wafers are optimized for diverse applications from sensors to power components.
Chips fabricated on SOI wafers achieve 30% faster speeds and 80% lower power demands compared to CMOS devices. The SOI structure consists of three layers: a top active device layer for transistor fabrication, a buried oxide (BOX) insulator layer, and a bottom handle wafer layer.
The BOX insulates the delicate devices, shielding them from environmental interference while enhancing performance. Transistors built into the top device layer drive the speed and efficiency gains of SOI technology. They allow for sophisticated power-saving configurations and reduced data loss from cosmic rays or radiation.
With the addition of SOI wafers, WaferPro now delivers this advanced substrate option to R&D teams and manufacturers pursuing next-generation innovations. Our SOI wafers merge cutting-edge design potential with our proven wafer manufacturing quality.
Types Of SOI Wafer
Customizability is a major cornerstone of WaferPro and we always try our best to meet all your needs. In that very essence WaferPro offers SOI wafers of the following types:
This type of wafer has device thickness from 1µm to 300µm.
This type of wafer has device thickness <500nm.
Uniformity of device thickness can be as low as ±0.5µm for thick SOI and ±10nm for ultra-thin SOI.
This type of SOI has very low BOW/WARP/TTV for specific applications.
MAJOR APPLICATIONS OF SOI WAFER
Low-Power ICs
SOI technology enables fabrication of low leakage, low power integrated circuits for mobile devices
High Speed Electronics
Ultra-fast switching RF SOI devices used in 5G, WiFi 6, and radar communication systems
Low Noise Amplifiers
SOI wafers are ideal for manufacturing ultra low-noise IF, RF semiconductor amplifiers
Automotive Electronics
Rugged SOI chips meet automotive reliability and temperature requirements
Photonics
SOI wafers are useful for integrating electronics and photonics for optical transceivers and sensors
MEMS
SOI wafers are suitable substrates for specialized MEMS accelerometers, gyroscopes etc.
Aerospace ICs
Exceptional radiation hardness, wide temperature tolerance for space electronics
Biomedical
Disposable biosensors and DNA microarrays manufactured using SOI micromachining
Smart Power
Merging high voltage power devices with control logic on SOI wafer
Our Capability
SOI wafers are offered with great customizability and the parameters are greatly flexible as per your needs.
| SOI | Diameters | 2"(50.8mm) | 3"(76.2mm) | 4"(100mm) | 5"(125mm) | 6"(150mm) | 8"(200mm) |
|---|---|---|---|---|---|---|---|
| Device layer | Type | P , N , Intrinsic | |||||
| Dopant | B , Ph , Undoped | ||||||
| Orientation | ( 1-0-0 ) , ( 1-1-1 ) | ||||||
| Resistivity (ohm-cm) | 0.001 - 10,000+ |
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| Thickness (μm) | 0.05 - 300 | ||||||
| Uniformity | ± 10nm , ± 0.5μm , ± 1μm |
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| BOX layer | BOX Thickness | 1,000A - 3μm | |||||
| BOX Uniformity | ≤ ± 5 % | ||||||
| Handle layer | Type | P , N , Intrinsic | |||||
| Dopant | B , Ph , Undoped | ||||||
| Orientation | ( 1-0-0 ) , ( 1-1-1 ) | ||||||
| Resistivity (ohm-cm) | 0.001 - 10,000+ |
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| Thickness (μm) | 200 - 750 | ||||||
| Uniformity (μm) | ≤ ± 15 | ||||||
| Finish | SSP , DSP | ||||||
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