silicon_wafers

SILICON WAFER

Silicon wafers are used as a substrate material in a wide range of applications. They are the building block of modern electronics. WaferPro offers Prime, Test, Monitor, SEMI standard, and customized silicon wafers in all diameters from 2″ to 300mm. Our silicon wafers are made from ingot using the most commonly known crystal growing process called the Czochralski (CZ) process.

We carry a wide selection of Prime Semi Standard CZ wafers in stock at all times. Any wafer we have in stock can be ready to ship within a day. In some cases, the same day as the order is placed.

We also offer wafers with various films. Wafers with films are usually custom orders, but we can ship most orders for wafers with films in approximately two weeks.

Types of SILICON Wafer

WaferPro offers Silicon Wafers of the following types:

Prime Silicon Wafer

Prime silicon wafers are also referred to as Device Grade or Particle Grade wafers. Prime wafers have tighter spec for Thickness, Bow, Warp, TTV, Surface Roughness and Cleanliness.
Applications: • Semiconductor devices • Photolithography • Particle Monitors and more.

Test Silicon Wafer

Also referred to as Monitor or Dummy wafers. Test wafers have wider or looser specs than Prime wafers. They can be Prime wafers that did not meet all of the specs to be classified as a Prime wafer.
Applications: • Equipment Setup and Testing • Production Process Evaluation • Process Development and more.

Reclaimed Silicon Wafer

Reclaimed wafers are Prime and Test wafers that have been used in manufacturing, then have been chemically and/or mechanically treated for reuse as a bare silicon wafer. While these wafers may be slightly thinner than virgin Test wafers, they can usually be used as are a lower cost alternative in many of the same processes.

Silicon Wafer With Thermal Oxide

These are Silicon wafers which have been through either a Wet Thermal Oxide, or a Dry Thermal Oxide process, to “grow” a Thermal Oxide, or Silicon Dioxide (Sio2), layer on the surface of the wafer. This is done by exposing the wafer to a combination of oxidizing agents and heat. The oxide is most commonly used as a dielectric layer and in MEMs devices. Thermal Oxide is grown on both sides of the wafer, but can then be removed from one side if a single side oxide layer is needed.

Silicon Wafer With LPCVD/PECVD Nitride

We offer wafers with two types of Nitride film.

LPCVD Nitride - Low Pressure Chemical Vapor Deposition Nitride
Applied to both sides of the wafer at the same time.
Used where temperature is not critical.
The higher temperature process which leads to more stable, higher purity film.

PECVD Nitride - Plasma Enhanced Chemical Vapor Deposition Nitride
Applied to only one side of the wafer.
More suitable when a lower temperature process is needed.

CZ wafer types

Our Capability

CZ wafer capability

Custom Silicon Wafer

Meeting your wafer needs is our top priority. We can fabricate Silicon Wafers to your customized specs. If you need thin wafers, thick wafers, or wafers with custom flat lengths, we can make them for you. We also offer Silicon Wafers with a wide variety of films: Oxide, Nitride, Sputtered and Evaporated Metals, Film Stacks, Polysilicon and Oxynitride. 

Contact us today to find out how we can serve your organization’s silicon wafer needs.

Slider silicon wafers

Our Best Sellers

Product SKUProduct Specification
C020012" N/AS <1-0-0> <0.005 ohm-cm, 279±25µm PRIME SILICON WAFER, SSP, 1 SEMI FLAT
C020022" N/PH <1-0-0> 1-10 ohm-cm, 279±25µm PRIME SILICON WAFER, SSP, 1 SEMI FLAT
C020032" P/B <1-0-0> 1-10 ohm-cm, 279±25µm PRIME SILICON WAFER, SSP, 1 SEMI FLAT
C020042" P/B <1-0-0> 10-20 ohm-cm, 279±25µm PRIME SILICON WAFER, SSP, 1 SEMI FLAT
C030013" N/AS <1-0-0> <0.005 ohm-cm, 381±25µm PRIME SILICON WAFER, SSP, 2 SEMI FLATS
C030023" N/PH <1-0-0> 1-10 ohm-cm, 381±25µm PRIME SILICON WAFER, SSP, 2 SEMI FLATS
C030033" N/PH <1-0-0> 10-20 ohm-cm, 381±25µm PRIME SILICON WAFER, SSP, 2 SEMI FLATS
C030043" P/B <1-0-0> <0.005 ohm-cm, 381±25µm PRIME SILICON WAFER, SSP, 2 SEMI FLATS
C030053" P/B <1-0-0> 1-10 ohm-cm, 381±25µm PRIME SILICON WAFER, SSP, 2 SEMI FLATS
C030063" P/B <1-0-0> 10-20 ohm-cm, 381±25µm PRIME SILICON WAFER, SSP, 2 SEMI FLATS
C04001100mm N/AS <1-0-0> <0.005 ohm-cm, 525±20µm PRIME SILICON WAFER, SSP, 2 SEMI FLATS
C04002100mm N/PH <1-0-0> 1-5 ohm-cm, 525±20µm PRIME SILICON WAFER, SSP, 2 SEMI FLATS
C04003100mm N/PH <1-0-0> 5-10 ohm-cm, 525±20µm PRIME SILICON WAFER, SSP, 2 SEMI FLATS
C04004100mm N/PH <1-0-0> 10-20 ohm-cm, 525±20µm PRIME SILICON WAFER, SSP, 2 SEMI FLATS
C04005100mm P/B <1-0-0> <0.005 ohm-cm, 525±20µm PRIME SILICON WAFER, SSP, 2 SEMI FLAT
C04006100mm P/B <1-0-0> 0.01-0.02 ohm-cm, 525±20µm PRIME SILICON WAFER, SSP, 2 SEMI FLAT
C04007100mm P/B <1-0-0> 1-5 ohm-cm, 525±20µm PRIME SILICON WAFER, SSP, 2 SEMI FLATS
C04008100mm P/B <1-0-0> 5-10 ohm-cm, 525±20µm PRIME SILICON WAFER, SSP, 2 SEMI FLATS
C04009100mm P/B <1-0-0> 10-20 ohm-cm, 525±20µm PRIME SILICON WAFER, SSP, 2 SEMI FLATS
C06001150mm P/B <1-0-0> 1-10 ohm-cm, 675±20µm PRIME SILICON WAFER, SSP, 1 SEMI FLAT
C06002150mm P/B <1-0-0> 5-10 ohm-cm, 675±20µm PRIME SILICON WAFER, SSP, 1 SEMI FLAT
C06003150mm P/B <1-0-0> 10-20 ohm-cm, 675±20µm PRIME SILICON WAFER, SSP, 1 SEMI FLAT
C06004150mm P/B <1-0-0> 1-30 ohm-cm, 675±20µm PRIME SILICON WAFER, SSP, ONE SEMI NOTCH
C08001200mm P/B <1-0-0> 5-30 ohm-cm, 725±20µm PRIME SILICON WAFER, SSP, ONE SEMI NOTCH
C08002200mm P/B <1-0-0> 5-30 ohm-cm, 725±20µm PRIME SILICON WAFER, SSP, ONE SEMI NOTCH, SEMI SCRIBE ON BACK
C12001300mm P/B <1-0-0> 1-20 ohm-cm, 775±20µm PRIME SILICON WAFER, DSP, ONE SEMI NOTCH

SEMI Standard Specifications

SEMI Standard2" (50.8mm)3" (76.2mm)4" (100mm)5" (125mm)6" (150mm)8" (200mm)12" (300mm)
Diameter 50.8 ± 0.38mm76.2 ± 0.63mm100 ± 0.5mm125 ± 0.5mm150 ± 0.2mm200 ± 0.2mm300 ± 0.2mm
Thickness279 ± 25µm381 ± 25µm525 ± 20 µm or
625 ± 20µm
625 ± 20µm675 ± 20µm or
625 ± 15µm
725 ± 20µm775 ± 20µm
Primary Flat Length15.88 ± 1.65mm22.22 ± 3.17mm32.5 ± 2.5mm42.5 ± 2.5mm57.5 ± 2.5mmNotchNotch
Secondary Flat Length8 ± 1.65mm11.18 ± 1.52mm18 ± 2.0mm27.5 ± 2.5mm37.5 ± 2.5mmNANA
Primary Flat Location{110} ± 1 deg.{110} ± 1 deg.{110} ± 1 deg.{110} ± 1 deg.{110} ± 1 deg.{110} ± 1 deg.{110} ± 1 deg.

Specifications for custom diameter wafers, thick wafers, thin wafers, DSP wafers, and other custom wafers are not strictly related to the SEMI M1-0302 protocols. Please contact us here if you have any questions about SEMI standard specifications.

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