WaferPro offers a variety of film processing options for your silicon needs. This includes LPCVD nitride, and WaferPro can provide wafers with stoichiometric LPCVD nitride or low stress LPCVD nitride, as well as super low stress LPCVD nitride. We also offer high quality PECVD nitride, Low stress PECVD nitride, and PECVD OxyNitride. Wafer diameter is available from 2″ to 300mm and nitride thickness is available from 100Å to 20,000Å.
Any amount of quantity can be ordered with a minimum batch order of 25 wafers.
LPCVD Nitride – Low Pressure Chemical Vapor Deposition Nitride
-Applied to both sides of the wafer at the same time.
-Used where temperature is not critical.
-The higher temperature process which leads to more stable, higher purity film.
PECVD Nitride – Plasma Enhanced Chemical Vapor Deposition Nitride
-Applied to only one side of the wafer.
-More suitable when a lower temperature process is needed.
Film thickness: 100Å – 4500Å on both sides
Film stress: =>800±50 MPa Tensile Stress
Film thickness: 100Å – 20,000Å on both sides
Film stress: <250±50 MPa Tensile Stress
Film thickness: 100Å – 20,000Å on both sides
Film stress: <100±50 MPa Tensile Stress
Film thickness: 100Å – 5000Å on one side
Film stress: +400±50 MPa Tensile Stress
Film thickness: 100Å – 20,000Å on one side
Film stress: <250±50 MPa Tensile Stress
Film thickness: 100Å – 20,000Å on one side
Film stress: -400±50 MPa Tensile Stress
Here is a list of some key applications for silicon nitride wafers:
Silicon nitride commonly used for fabrication of MEMS sensors, actuators and microfluidic devices
Silicon nitride useful for waveguides, LEDs, photodetectors, fiber optics packaging
Excellent insulator for high voltage power electronics and wireless charging devices
Silicon nitride reliability at wide temperature range suits aerospace electronic systems
Insulating strength allows silicon nitride to support device wafers during backgrinding
Silicon nitride inertness compatible with implants and lab-on-a-chip biofluidics
Ultra-low charge trap density aids adoption in spin transport electronics
Used as transistor sidewall spacer and passivation layer in chip fabrication
Anti-fouling surface helps silicon nitride microreactors for specialized chemistry
At WaferPro, quality is our top priority when it comes to our silicon nitride films. We utilize advanced low pressure chemical vapor deposition (LPCVD) and plasma enhanced chemical vapor deposition (PECVD) processes to produce nitride films known for their stability, consistency, and outstanding physical properties critical for device fabrication.
Through extensive research and continuous improvement of our proprietary deposition techniques, we are able to optimize key nitride film qualities like conformity, uniform thickness, low intrinsic stress, thermal stability at high temperatures, and precise composition control. As a result, our LPCVD and PECVD nitride films provide excellent step coverage along wafer edges, across high-aspect ratio features, and onto structured or patterned surfaces while maintaining pinhole-free integrity.
This level of quality enables very high manufacturing yields for our customers and supports the reliable, repeatable device performance essential for commercial semiconductor production. Whether the application requires an ultra-low-defect insulator, a diffusion barrier, a mechanical strengthening layer, or a advanced dielectric material, our nitride films have the proven stability and consistency to meet the need.
Our expert technical sales representatives have decades of combined experience assisting customers with PECVD and LPCVD nitride film solutions for silicon wafer fabrication and advanced microelectronic devices. Please contact us today to discuss how our quality nitride films can help you improve yields, lower costs, and get to market faster with innovative products. We offer worldwide shipping and are ready to deliver exceptional quality nitride films for your manufacturing success!