Types of WET Thermal Oxide
In this method, a mixture of hydrogen and a high-purity oxygen are burned at ~1000°C leading to the production of water vapour. Although this method may not produce a very high quality end product and may only be used as a masking layer, it is advantageous in the way it produces a higher growth rate than the dry oxidation.
Wet Thermal Oxide On Both Sides Of Wafer
Film thickness: 500Å – 10µm on both sides
Film thickness Tolerance: Target ±5%
Film stress: - 320±50 MPa Compressive
Wet Thermal Oxide On Single Side Of Wafer
Film thickness: 500Å – 10,000Å on both sides
Film thickness Tolerance: Target ±5%
Film stress: -320±50 MPa Compressive