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Silicon Thermal Oxide Wafers SiO2

WaferPro provides high quality silicon thermal oxide wafers in all diameters from 2″ to 300mm. We ensure your specific requirements are met by choosing prime grade and defecting free silicon wafer as a substrate so that a high uniform layer of thermal oxide is formed in a furnace.

In micro-technology, the main insulating material used is Silicon dioxide which in chemical symbols is written as SiO2. In order to produce an insulating oxide layer, thermal oxidation, which is the most common technique used to obtain the layer is used. The process of obtaining the layer is performed in a furnace.

Any amount of quantity can be ordered with a minimum batch order of 25 wafers.

Types of Thermal Oxide

In this method, a mixture of hydrogen and a high-purity oxygen are burned at ~1000°C leading to the production of water vapour. Although this method may not produce a very high quality end product and may only be used as a masking layer, it is advantageous in the way it produces a higher growth rate than the dry oxidation.

Wet Thermal Oxide On Both Sides Of Wafer

Film thickness: 500Å – 10µm on both sides
Film thickness Tolerance: Target ±5%
Film stress: – 320±50 MPa Compressive

Wet Thermal Oxide On Single Side Of Wafer

Film thickness: 500Å – 10,000Å on both sides
Film thickness Tolerance: Target ±5%
Film stress: -320±50 MPa Compressive

Dry Thermal Oxide On Both Sides Of Wafer

Film thickness: 100Å – 3,000Å on both sides
Film thickness Tolerance: Target ±5%
Film stress: – 320±50 MPa Compressive

Dry Thermal Oxide On Single Side Of Wafer

Film thickness: 100Å – 3,000Å on both sides
Film thickness Tolerance: Target ±5%
Film stress: – 320±50 MPa Compressive

Dry Chlorinated Thermal Oxide With Forming Gas Anneal

Film thickness: 100Å – 3,000Å on both sides
Film thickness Tolerance: Target ±5%
Film stress: – 320±50 MPa Compressive
Sides Process: Both Sides

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KEY APPLICATIONS OF SILICON THERMAL OXIDE WAFER

Here is a list of some key applications for silicon wafers with thermal oxide layers:

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Integrated Circuits

Gate oxide, field oxide, inter-metal dielectrics fabricated by thermal oxidation of silicon

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MEMS

Thermal oxide layers provide excellent electrical isolation in MEMS devices

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Optoelectronics

Thermal oxidation useful for electrical/optical isolation layers in silicon photonics

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Power Devices

Thermally grown oxide provides dielectric isolation for high voltage power electronics

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Radiation Hardening

An annealed thermal oxide helps mitigate radiation damage in aerospace ICs

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Passivation

Superior interface properties make thermal oxide well-suited for chip passivation layer

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Diffusion Masking

Acts as diffusion barrier for selective doping/implantation steps in device fabrication

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Gas Sensing

Reactant gas permeability of porous thermal oxide films enable chemiresistive sensors

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Biological Sensors

Enables biofunctionalization of surface for selective affinity to target analytes

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Custom Thermal Oxide Film

WaferPro provides both single-side and double-side thermal oxide silicon wafers to meet a breadth of application needs.

Our standard offer is the double-side oxide wafer, featuring uniform silicon dioxide layers on both sides resulting from controlled thermal oxidation of the silicon substrate. However, we also offer customized single-side oxide wafers tailored to your specific requirements. These start as double-side oxide wafers, with one silicon dioxide layer then selectively removed using a buffered hydrofluoric acid etchant.

This flexible oxide wafer manufacturing allows us to supply small batches with a mix of single and double-side oxide wafers. Whether you need wafers for process development, material analysis, or high-volume manufacturing, we can provide the precise oxide wafer configuration suited for your application.

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Our Quality

Silicon dioxide wafers serve an essential role as a high-quality dielectric material vital to modern semiconductors. The unrivaled insulating properties of SiO2 enable intricate device geometries and enhanced performance compared to semiconductor metals. Oxide layers also facilitate selective etching and masking operations during nano-scale fabrication.

Beyond semiconductors, oxide wafers get integrated into microelectromechanical systems (MEMS) as moisture barriers, structural components, or passivation layers. Our oxide wafer quality ensures MEMS engineers can craft intricate mechanical structures and fluidic systems relying on silicon dioxide’s mechanical resilience.

For any application demanding reliable silicon dioxide wafers, trust in WaferPro’s specialized engineering and stringent quality assurance. Contact our customer service team today to discuss how our single-side and double-side oxide wafers can empower your next innovation.

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