at minimizes the power and heat production while boosting the overall performance of the devices. SOI wafers have three-layered wafers made of the following layers.
➡ Layer 1: Active Prime Quality Si Layer, also called the Device Layer.
➡ Layer 2: A buried Oxide layer of electrically insulating SiO2 (Silicon Dioxide), also called BOX.
➡ And Layer 3: Bulk Si Support Wafer, also called Handle.
So, all these layers combine to form Silicon On Insulator Wafers. SOI Wafers are different from all other wafer kinds and used for specific applications.
This method doesn't involve implantation, and that's the reason some applications prefer this method over others. Also, it reduces the overall damage done to the surface of the substrate. Also, it offers free charge carriers to ensure the long-term efficient performance of devices. This fabricating process is used generally to manufacture SOI Wafers having a device layer greater than 2μm. We, at WaferPro, can produce these Silicon On Insulator Wafers for your projects in any required diameter from 3" to 8". So, that's all about Bonded And Etchback SOI.
SmartCut combines the flexibility of BESOI (Method 1) and repeatability of SIMOX (Method 2) to offer different oxide film thicknesses while maintaining the high uniformity across produced SOI Wafers. Also, BESOI Method allows the recycling of bonded wafers, and that's why this method is more cost effective. Also, due to SmartCut Silicon On Insulator Wafers cleaving process, these have the abilities to produce very thin (around 500 nm) device layers.
Can’t find wafers that meet your desired specs? No problem! We can build wafers with unique specifications to meet your needs.
Request a quote
Our online store features a wide variety of wafer sizes, orientations, dopants, thicknesses, and more.
Shop online