Do you know what Silicon On Insulator Wafers are? It’s okay if you know but if you don’t then WaferPro is here to introduce you with SOI Wafers. So, read this post till the end, and you will get enough exposure and information about Silicon On Insulator wafers. So, without getting into the jargons, let’s continue with our main topic.
The Basics Of SOI Wafers
SOI stands for Silicon On Insulator Wafers. These wafers perform very efficiently for MEMS (microelectronics-mechanical-systems), and CMOS integrated circuit fabrication purposes. Silicon on insulator wafers have abilities to improve many processes efficiently where other traditional Si wafers are applied. Overall, SOI Wafers are the best manufacturing solution th
at minimizes the power and heat production while boosting the overall performance of the devices. SOI wafers have three-layered wafers made of the following layers.
➡ Layer 1: Active Prime Quality Si Layer, also called the Device Layer.
➡ Layer 2: A buried Oxide layer of electrically insulating SiO2 (Silicon Dioxide), also called BOX.
➡ And Layer 3: Bulk Si Support Wafer, also called Handle.
So, all these layers combine to form Silicon On Insulator Wafers. SOI Wafers are different from all other wafer kinds and used for specific applications.
SOI Wafers Fabrication Process
There are three unique ways to fabricate SOI Wafers. All these three processes produce different substrates that create the characteristics differences between final products. So, if you’re not able to determine the right fabrication process for your project, WaferPro is here to guide you. Just drop a mail or call us and we will help you out in minimum possible time. So, let’s have a look at all the three fabrication process now so that you get the right exposure.
1. Bonded And Etchback SOI
This method doesn’t involve implantation, and that’s the reason some applications prefer this method over others. Also, it reduces the overall damage done to the surface of the substrate. Also, it offers free charge carriers to ensure the long-term efficient performance of devices. This fabricating process is used generally to manufacture SOI Wafers having a device layer greater than 2μm. We, at WaferPro, can produce these Silicon On Insulator Wafers for your projects in any required diameter from 3″ to 8″. So, that’s all about Bonded And Etchback SOI.
2. SIMOX Method
SIMOX stands for Separation by Implantation of Oxygen Process. This method can control and command the oxide layer thickness. That’s the main reason it is preferred over other fabrication methods for SOI Wafers. Also, for some application cases, Oxynitride or nitrogen can replace oxygen without any adverse effects. However, the majority of the applications require oxygen for quality results. So, that’s all about SIMOX fabrication process.
3. SmartCut Fabrication Process
SmartCut combines the flexibility of BESOI (Method 1) and repeatability of SIMOX (Method 2) to offer different oxide film thicknesses while maintaining the high uniformity across produced SOI Wafers. Also, BESOI Method allows the recycling of bonded wafers, and that’s why this method is more cost effective. Also, due to SmartCut Silicon On Insulator Wafers cleaving process, these have the abilities to produce very thin (around 500 nm) device layers.
Summary
So, that’s all about Silicon On Insulator Wafers and the fabrication processes involved. Hope this post has exposed every fact and detail related to Silicon On Insulator wafers. Also, read Float Zone Wafer – Characteristics and applications and Silicon Chips: Their Uses and How They Are Made. That’s it for now. Also, do follow us to get more such posts and updates about wafer world and technology.
